Sekilas 2023, Meniti 2024 Jalan Menara Gading Masih Panjang

Sedar mahupun tidak, tahun 2023 menutup tirai dengan 1,001 kisah dan rencah. Institusi menara gading juga tidak terkecuali daripada warna-warni kisah, sama ada kisah-kisah indah tentang pelbagai kejayaan yang diraih, ataupun polemik yang masih belum ada jalan tuntas penyelesaian. Nukilan ini menyentuh sebahagian isu-isu yang berlegar di institut pengajian tinggi (IPT) dan menjadi buah mulut masyarakat dan juga tinta rasa daripada seorang tenaga pensyarah muda yang masih meniti jalan dan bakti di menara gading, namun punya harapan yang besar untuk menggalas dengan baik tanggungjawab sebagai pendidik anak bangsa

Pendidikan hingga ke menara gading dipandang sepi atau kekal relevan

Setelah keputusan Sijil Pelajaran Malaysia (SPM) diumumkan baru-baru ini, gegak gempita sekali lagi isu pendidikan sehingga ke menara gading yang dikatakan sudah tidak relevan dan tidak menjanjikan masa depan yang cerah. Anak-anak dan ibu bapa disajikan dengan kisah bagaimana seseorang itu mampu menjadi jutawan walaupun tidak mempunyai kelulusan, hatta tidak menghabiskan pengajian peringkat sekolah menengah mahupun universiti

Cabaran IPT lahirkan insan berilmu, bersahsiah tinggi

Sedar atau tidak, 2023 menutup tirai dengan 1,001 kisah dan rencah. Institusi menara gading juga tidak terkecuali daripada warna-warni kisah, indah atau payah mahu pun polemik masih belum ada jalan tuntas penyelesaian

A temperature characterization of (Si-FinFET) based on channel oxide thickness

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox = 1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (∆I) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm

The impact of channel fin width on electrical characteristics of Si-FinFET

This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (WF=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics

A temperature characterization of (Si-FinFET) based on channel oxide thickness

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (ΔI) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm

Temperature characteristics of FinFET based on channel fin width and working voltage

This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V)

Prosthetic robotic arm with patient monitoring system for children

Prosthetic robotic arm are becoming crucial needs for children with forearm amputation or disabilities but the cost are expensive. Children with forearm amputation face various obstacles related to regular activities such as holding and grasping the objects or tools. Monitoring system especially for disabled people has been an essential features in order to improve Quality of Life (QOL)

Machine learning based data monitoring system for chicken poultry

Livestock is one of the production sectors that can produce many resources for human needs such as meat, egg, milk, leather, wool, and fur. Farmer must ensure that all farm animals are in good condition to achieve optimum level of production. The welfare of livestock can be determined by observing and analyzing the animal's health and behaviour. The livestock that has a symptom of being sick leads to a low level of production compared to good animal welfare. In the case of chicken poultry, a low nutrient diet and inconsistent daylight may lead to decreased of laid eggs. As a result, the poultry are unable to produce the desired amount of egg to end consumer which trigger an issue in food security. The objective of this study is to evaluate chicken production based on its effectiveness by implementing machine learning. The level of chicken production is determined by using fuzzy logic as the machine learning platform based on the collected data. After the data were evaluated by fuzzy logic, the result of the system will indicate whether the chicken will produce a low, normal, or high level of production. By using this system, farm owners are able to predict whether the chickens on their farms are able to produce the desired quantity of chicken

IoT-based healthcare-monitoring system towards improving quality of life: A review

The Internet of Things (IoT) is essential in innovative applications such as smart cities, smart homes, education, healthcare, transportation, and defense operations. IoT applications are particularly beneficial for providing healthcare because they enable secure and real-time remote patient monitoring to improve the quality of people’s lives. This review paper explores the latest trends in healthcare-monitoring systems by implementing the role of the IoT. The work discusses the benefits of IoT-based healthcare systems with regard to their significance, and the benefits of IoT healthcare. We provide a systematic review on recent studies of IoT-based healthcare-monitoring systems through literature review. The literature review compares various systems’ effectiveness, efficiency, data protection, privacy, security, and monitoring. The paper also explores wireless- and wearable-sensor-based IoT monitoring systems and provides a classification of healthcare-monitoring sensors. We also elaborate, in detail, on the challenges and open issues regarding healthcare security and privacy, and QoS. Finally, suggestions and recommendations for IoT healthcare applications are laid down at the end of the study along with future directions related to various recent technology trends